VS-245NQ015PBF www.vishay.com vishay semiconductors revision: 19-mar-15 1 document number: 94464 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high performance schottky rectifier, 240 a features ? 125 c t j operation ? low forward voltage drop ? high frequency operation ? guard ring for enhanced ruggedness and long term reliability ? designed and qualified for industrial level ? ul approved file e222165 ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 description the vs-245nq.. high curren t schottky rectifier module series has been optimized for low reverse leakage at high temperature. the proprietary barrier technology allows for reliable operation up to 150 c junction temperature. typical applications are in high curre nt switching power supplies, plating power supplies, ups systems, converters, freewheeling diodes, welding, and reverse battery protection. product summary i f(av) 240 a v r 15 v package half-pak (d-67) circuit single diode lug terminal anode base cathode half-pak (d-67) major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform 240 a v rrm 15 v i fsm t p = 5 s sine 20 000 a v f 240 a pk , t j = 75 c 0.37 v t j range -55 to 125 c voltage ratings parameter symbol VS-245NQ015PBF units maximum dc reverse voltage v r 15 v maximum working peak reverse voltage v rwm 25 absolute maximum ratings parameter symbol test conditions values units maximum average forward current ? see fig. 5 i f(av) 50 % duty cycle at t c = 73 c, rectangular waveform 240 a maximum peak one cycle ? non-repetitive surge current ? see fig. 7 i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 20 000 10 ms sine or 6 ms rect. pulse 3000 non-repetitive avalanche energy e as t j = 25 c, i as = 5 a, l = 1 mh 12 mj repetitive avalanche current i ar current decaying linear ly to zero in 1 s ? frequency limited by t j maximum v a = 1.5 x v r typical 2a
VS-245NQ015PBF www.vishay.com vishay semiconductors revision: 19-mar-15 2 document number: 94464 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width < 500 s fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage electrical specifications parameter symbol test conditions values units maximum forward voltage drop ? see fig. 1 v fm (1) 240 a t j = 25 c 0.52 v 480 a 0.61 240 a t j = 125 c 0.37 480 a 045 maximum reverse leakage current ? see fig. 2 i rm (1) t j = 25 c v r = rated v r 80 ma t j = 125 c 4000 maximum junction capacitance c t v r = 5 v dc (test signal range 100 khz to 1 mhz) 25 c 15 800 pf typical series inductance l s from top of terminal ho le to mounting plane 5.0 nh maximum voltage rate of change dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage ? temperature range t j , t stg -55 to 125 c maximum thermal resistance, ? junction to case r thjc dc operation ? see fig. 4 0.19 c/w typical thermal resistance, ? case to heatsink r thcs mounting surface, smooth and greased 0.05 approximate weight 30 g 1.06 oz. mounting torque minimum non-lubricated threads 3 (26.5) n m (lbf in) maximum 4 (35.4) terminal torque minimum 3.4 (30) maximum 5 (44.2) case style half-pak module v fm - forward volta g e drop (v) i f - instantaneous forward current (a) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1 10 100 1000 tj = 25c tj = 75c tj = 100c v r - reverse volta g e (v) i r - reverse current (ma) 0 3 6 9 12 15 1 10 100 1000 10 000 25c 75c 100c
VS-245NQ015PBF www.vishay.com vishay semiconductors revision: 19-mar-15 3 document number: 94464 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics v r - reverse volta g e (v) c - junction capacitance (pf) 0 5 10 15 20 25 30 1000 10 000 100 000 t 1 - rectan g ular pulse duration (s) z thjc - thermal impedance (c/w) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.001 0.01 0.1 1 s ingle pul s e (thermal re s i s tance) d = 0.20 d = 0.75 d = 0.50 d = 0.33 d = 0.25 allowa b le case temperature (c) i f(av) - avera g e forward current (a) 0 40 80 120 160 200 240 280 320 360 0 20 40 60 80 100 120 dc s ee note (1) sq uare wave (d = 0.50) 80 % rated v r applied avera g e power loss (w) i f(av) - avera g e forward current (a) 0 50 100 150 200 250 300 350 0 50 100 150 200 d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 rm s limit dc
VS-245NQ015PBF www.vishay.com vishay semiconductors revision: 19-mar-15 4 document number: 94464 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - maximum non-re petitive surge current fig. 8 - unclamped inductive test circuit note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; ? pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); ? pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r ? ordering information table links to related documents dimensions www.vishay.com/doc?95020 i f s m - non-repetitive s ur g e current (a) t - s quare wave pulse duration (s) 10 100 1000 10 000 1000 10 000 100 000 at any rated load condition s and with rated v rrm applied following s urge current monitor high-speed switch d.u.t. r g = 25 + freewheel diode v d = 25 v l irfp460 40hfl40s02 - average current rating (x 10) 2 - product silicon identification 3 - n = not isolated 4 - q = schottky rectifier diode 5 - voltage rating (015 = 15 v) 6 7 - lead (pb)-free device code 5 1 3 2 4 6 7 24 vs- 5 n q 015 pbf 1 - vishay semiconductors product
document number: 95020 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 20-may-09 1 d-67 half-pak outline dimensions vishay semiconductors dimensions in millimeters (inches) 30 0.05 (1.2 0.002) 5 (0.20) 4 (0.16) 13 (0.51) 24.4 (0.96) 5 (0.196) + 45 ? 7.3 0.1 (0.29 0.0039) 17.5 (0.69) 16.5 (0.65) ? 4.3 - 0.1 0.0 (? 0.169 ) - 0.004 0.000 ?" - 20 unc 40 max. (1.58) 21 (0.82) 20 (0.78)
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